ATMI and IBM to Develop Agreement for 45-,32- and 22nm Devices

By DE Editors

ATMI, Inc. (Danbury, CT) entered into an agreement with IBM to jointly develop and demonstrate advanced chemical formulations for highly implanted photoresist strip applications that will allow the design and production of next-generation semiconductor devices targeting 45-nanometer (nm) and future device manufacturing processes.

Under the agreement, ATMI will add its semiconductor materials and process experience to IBM’s integrated circuit design and manufacturing knowledge. Together, ATMI and IBM will work to integrate new materials and thin film processes to address challenges in advanced integrated circuit production.

The joint development activities will take place at ATMI’s headquarters and laboratories in Danbury, Connecticut, and at IBM’s Watson Research Center in Yorktown Heights, New York.

For more information, go to ATMI.

Sources: Press materials received from the company and additional information gleaned from the company’s website.